Real time changes of the GaAs band structure were determined using time-resolved photoluminescence (PL) spectroscopy, with nanosecond resolution, in single-event continuous compression experiments. Continuous compression to 5 GPa over 150 ns was achieved by impacting fused silica buffers preceding the GaAs crystals. PL spectra and compression wave profiles were measured simultaneously for uniaxial strain compression along the  orientation. Below 3 GPa, PL peaks from Te donors and Zn acceptors showed a blueshift upon compression, consistent with a widening of the band gap. At 3 GPa, the PL intensity decreased abruptly, due to a direct-to-indirect transition.
Skip Nav Destination
Research Article| October 15 2009
Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa
M. D. McCluskey;
P. Grivickas, M. D. McCluskey, Y. M. Gupta; Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa. Appl. Phys. Lett. 12 October 2009; 95 (15): 152108. https://doi.org/10.1063/1.3247886
Download citation file: