Thin film heterojunction solar cells such as those based on the chalcopyrites or amorphous silicon are often limited by interface recombination at the active heterointerface. A new strategy to overcome this limitation is described, replacing the conventional wider band gap contact material with a combination of a passivation layer plus the conventional contact in a point contact type structure. This is similar to the established method to minimize rear contact recombination in crystalline silicon solar cells. Here point contacts at the heterointerface of a based solar cell are modeled using the WIAS-TeSCA code. The importance of the donor defect energy level at the absorber/passivation interface is shown, and a way to improve the cell efficiency by (relative) is outlined.
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21 September 2009
Research Article|
September 24 2009
Three-dimensional simulations of a thin film heterojunction solar cell with a point contact/defect passivation structure at the heterointerface
N. Allsop;
N. Allsop
1
Helmholtz Zentrum Berlin für Materialien und Energie
, 14109 Berlin, Germany
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R. Nürnberg;
R. Nürnberg
2
Weierstraß Institut für Angewandte Analysis und Stochastik
, 10117 Berlin, Germany
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M. Ch. Lux-Steiner;
M. Ch. Lux-Steiner
1
Helmholtz Zentrum Berlin für Materialien und Energie
, 14109 Berlin, Germany
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Th. Schedel-Niedrig
Th. Schedel-Niedrig
a)
1
Helmholtz Zentrum Berlin für Materialien und Energie
, 14109 Berlin, Germany
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a)
Author to whom correspondence should be addressed. Electronic mail: schedel-niedrig@helmholtz-berlin.de.
Appl. Phys. Lett. 95, 122108 (2009)
Article history
Received:
April 16 2009
Accepted:
August 11 2009
Citation
N. Allsop, R. Nürnberg, M. Ch. Lux-Steiner, Th. Schedel-Niedrig; Three-dimensional simulations of a thin film heterojunction solar cell with a point contact/defect passivation structure at the heterointerface. Appl. Phys. Lett. 21 September 2009; 95 (12): 122108. https://doi.org/10.1063/1.3233962
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