Preferential oxidation of stacking faults in epitaxial off-axis (111) $3C-SiC$ films Available to Purchase

The effect of thermal dry oxidation on an off-axis (111) $3C-SiC$ film have been studied in order to subsequently realize a metal-oxide-semiconductor structure. A morphological characterization of the $SiO2$ surface, grown at $1200°C$ in an $O2$ flux, pointed out some defect-related effects as a consequence of the preferential oxidation of stacking faults over the (111) $3C-SiC$ surface. Scanning electron microscopy and atomic force microscopy confirmed such a hypothesis. Stacking faults are seen as promoters of a local polarity inversion in (111) $3C-SiC$⁠, from Si- to C-terminated surface, resulting in a higher oxidation rate as compared to defect-free zones.