is ideally suited as a tunable medium for radio frequency passive component. In this context we have studied the effect of biaxial strain on the dielectric and ferroelectric properties of thin films grown epitaxially on (001) substrates. The lattice parameters of the films determined by high-resolution x-ray diffraction with the thickness varying from 160 to 1000 nm indicated large biaxial compressive strain which decreased from 2.54% to 1.14% with increasing film thickness. Temperature-dependent measurements of the dielectric constant in our strained thin films revealed a significant increase in the Curie temperature as the film thickness is below 500 nm. Enhanced ferroelectric behavior was observed for highly strained films with a remanent polarization of in the 160-nm-thick layer. However, the thick films exhibited weak temperature dependence of the dielectric constant without any pronounced peak corresponding to the Curie temperature, which may suggest inhomogeneous strain distribution in the thick films.
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6 July 2009
Research Article|
July 08 2009
Effect of large strain on dielectric and ferroelectric properties of thin films
Bo Xiao;
Bo Xiao
a)
1Department of Electrical and Computer Engineering,
Virginia Commonwealth University
, Richmond, Virginia 23284, USA
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Vitaliy Avrutin;
Vitaliy Avrutin
1Department of Electrical and Computer Engineering,
Virginia Commonwealth University
, Richmond, Virginia 23284, USA
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Hongrui Liu;
Hongrui Liu
1Department of Electrical and Computer Engineering,
Virginia Commonwealth University
, Richmond, Virginia 23284, USA
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Emmanuel Rowe;
Emmanuel Rowe
1Department of Electrical and Computer Engineering,
Virginia Commonwealth University
, Richmond, Virginia 23284, USA
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Jacob Leach;
Jacob Leach
1Department of Electrical and Computer Engineering,
Virginia Commonwealth University
, Richmond, Virginia 23284, USA
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Xing Gu;
Xing Gu
1Department of Electrical and Computer Engineering,
Virginia Commonwealth University
, Richmond, Virginia 23284, USA
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Ümit Özgür;
Ümit Özgür
1Department of Electrical and Computer Engineering,
Virginia Commonwealth University
, Richmond, Virginia 23284, USA
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Hadis Morkoç;
Hadis Morkoç
1Department of Electrical and Computer Engineering,
Virginia Commonwealth University
, Richmond, Virginia 23284, USA
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W. Chang;
W. Chang
2
Naval Research Laboratory Washington
, Washington, DC 20375, USA
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L. M. B. Alldredge;
L. M. B. Alldredge
2
Naval Research Laboratory Washington
, Washington, DC 20375, USA
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S. W. Kirchoefer;
S. W. Kirchoefer
2
Naval Research Laboratory Washington
, Washington, DC 20375, USA
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J. M. Pond
J. M. Pond
2
Naval Research Laboratory Washington
, Washington, DC 20375, USA
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a)
Electronic mail: [email protected].
Appl. Phys. Lett. 95, 012907 (2009)
Article history
Received:
May 14 2009
Accepted:
May 18 2009
Citation
Bo Xiao, Vitaliy Avrutin, Hongrui Liu, Emmanuel Rowe, Jacob Leach, Xing Gu, Ümit Özgür, Hadis Morkoç, W. Chang, L. M. B. Alldredge, S. W. Kirchoefer, J. M. Pond; Effect of large strain on dielectric and ferroelectric properties of thin films. Appl. Phys. Lett. 6 July 2009; 95 (1): 012907. https://doi.org/10.1063/1.3151961
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