A bottom-up fabrication technique for the preparation of self-organized organic field-effect transistors (OFETs) on flexible plastic substrates is presented. Solution-based self-organization of OFETs is achieved by patterning the insulator surface with solution-wettable and unwettable regions. The proposed method satisfies several important requirements of printable electronics, including reduction in energy consumption, minimization of facilities, and the on-demand use of molecular materials. Self-organized OFETs display an average mobility of , on/off ratio of , and subthreshold slope of 0.18 V/dec, with near-zero and narrowly distributed threshold voltage. An inverter circuit prepared using these devices is demonstrated with high signal gain.
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2 March 2009
Research Article|
March 06 2009
Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors
Takeo Minari (三成剛生);
Takeo Minari (三成剛生)
1
RIKEN
, Wako, Saitama 351-0198, Japan
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Masataka Kano (加納正隆);
Masataka Kano (加納正隆)
2
Dai Nippon Printing Co., Ltd.
, Kashiwa, Chiba 277-0871, Japan
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Tetsuhiko Miyadera (宮寺哲彦);
Tetsuhiko Miyadera (宮寺哲彦)
3
AIST
, Tsukuba, Ibaraki 305-8568, Japan
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Sui-Dong Wang (王穂東);
Sui-Dong Wang (王穂東)
4FUNSOM
, Soochow University
, Suzhou, Jiangsu 215123, People’s Republic of China
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Yoshinobu Aoyagi (青柳克信);
Yoshinobu Aoyagi (青柳克信)
1
RIKEN
, Wako, Saitama 351-0198, Japan
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Kazuhito Tsukagoshi (塚越一仁)
Kazuhito Tsukagoshi (塚越一仁)
3
AIST
, Tsukuba, Ibaraki 305-8568, Japan
5International Center for Materials Nanoarchitectonics,
NIMS
, Tsukuba, Ibaraki 305-0044, Japan
6CREST,
JST
, Kawaguchi, Saitama 332-0012, Japan
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a)
Authors to whom correspondence should be addressed.
b)
Electronic mail: minari@riken.jp.
c)
Electronic mail: kazu.tsukagoshi@aist.go.jp.
Appl. Phys. Lett. 94, 093307 (2009)
Article history
Received:
January 14 2009
Accepted:
February 14 2009
Citation
Takeo Minari, Masataka Kano, Tetsuhiko Miyadera, Sui-Dong Wang, Yoshinobu Aoyagi, Kazuhito Tsukagoshi; Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors. Appl. Phys. Lett. 2 March 2009; 94 (9): 093307. https://doi.org/10.1063/1.3095665
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