Top-contact pentacene thin film transistors show the strong susceptibility of the contact resistance to ambient gases. Moisture and oxygen lead to the increase and decrease in the contact resistance, respectively. The phenomenon is interpreted by the local conductivity change in the contact region induced by the adsorption/desorption of ambient gases. The present works suggest that the current injection in the pentacene thin film transistors is strongly correlated with the charge transport property in the contact region, where the contact resistance is mainly controlled by the charge trap states.
REFERENCES
1.
H.
Klauk
, U.
Zschieschang
, J.
Pflaum
, and M.
Halik
, Nature (London)
445
, 745
(2007
).2.
Z. T.
Zhu
, J. T.
Mason
, R.
Dieckmann
, and G. G.
Malliaras
, Appl. Phys. Lett.
81
, 4643
(2002
).3.
W. L.
Kalb
, K.
Mattenberger
, and B.
Batlogg
, Phys. Rev. B
78
, 035334
(2008
).4.
D.
Knipp
, A.
Benor
, V.
Wagner
, and T.
Muck
, J. Appl. Phys.
101
, 044504
(2007
).5.
S.
Ogawa
, T.
Naijo
, Y.
Kimura
, H.
Ishii
, and M.
Niwano
, Appl. Phys. Lett.
86
, 252104
(2005
).6.
O. D.
Jurchescu
, J.
Baas
, and T. T. M.
Palstra
, Appl. Phys. Lett.
87
, 052102
(2005
).7.
S.
Hoshino
, M.
Yoshida
, S.
Uemura
, T.
Kodzasa
, N.
Takada
, T.
Kamata
, and K.
Yase
, J. Appl. Phys.
95
, 5088
(2004
).8.
E. J.
Meijer
, C.
Detcheverry
, P. J.
Baesjou
, E.
van Veenendaal
, D. M.
de Leeuw
, and T. M.
Klapwijk
, J. Appl. Phys.
93
, 4831
(2003
).9.
D.
Kumaki
, M.
Yahiro
, Y.
Inoue
, and S.
Tokito
, Appl. Phys. Lett.
90
, 133511
(2007
).10.
S. D.
Wang
, T.
Minari
, T.
Miyadera
, K.
Tsukagoshi
, and Y.
Aoyagi
, Appl. Phys. Lett.
91
, 203508
(2007
).11.
C. A.
Di
, G.
Yu
, Y. Q.
Liu
, Y. L.
Guo
, Y.
Wang
, W. P.
Wu
, and D. B.
Zhu
, Adv. Mater. (Weinheim, Ger.)
20
, 1286
(2008
).12.
S. D.
Wang
, T.
Minari
, T.
Miyadera
, Y.
Aoyagi
, and K.
Tsukagoshi
, Appl. Phys. Lett.
92
, 063305
(2008
).13.
D. J.
Gundlach
, L.
Zhou
, J. A.
Nichols
, T. N.
Jackson
, P. V.
Necliudov
, and M. S.
Shur
, J. Appl. Phys.
100
, 024509
(2006
).14.
S. D.
Wang
, T.
Minari
, T.
Miyadera
, Y.
Aoyagi
, and K.
Tsukagoshi
, Appl. Phys. Lett.
93
, 043311
(2008
).15.
G.
Horowitz
, P.
Lang
, M.
Mottaghi
, and H.
Aubin
, Adv. Funct. Mater.
14
, 1069
(2004
).16.
T.
Richards
and H.
Sirringhaus
, Appl. Phys. Lett.
92
, 023512
(2008
).17.
A. B.
Chwang
and C. D.
Frisbie
, J. Phys. Chem. B
104
, 12202
(2000
).18.
P. V.
Pesavento
, K. P.
Puntambekar
, C. D.
Frisbie
, J. C.
McKeen
, and P. P.
Ruden
, J. Appl. Phys.
99
, 094504
(2006
).19.
X. J.
Yan
, J.
Wang
, H. B.
Wang
, H.
Wang
, and D. H.
Yan
, Appl. Phys. Lett.
89
, 053510
(2006
).20.
T.
Minari
, T.
Miyadera
, K.
Tsukagoshi
, and Y.
Aoyagi
, Appl. Phys. Lett.
91
, 053508
(2007
).© 2009 American Institute of Physics.
2009
American Institute of Physics
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