We fabricate and characterize dual-gated graphene field-effect transistors using as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of . Our devices show mobility values of over at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.
Realization of a high mobility dual-gated graphene field-effect transistor with dielectric
Seyoung Kim, Junghyo Nah, Insun Jo, Davood Shahrjerdi, Luigi Colombo, Zhen Yao, Emanuel Tutuc, Sanjay K. Banerjee; Realization of a high mobility dual-gated graphene field-effect transistor with dielectric. Appl. Phys. Lett. 9 February 2009; 94 (6): 062107. https://doi.org/10.1063/1.3077021
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