Direct lithographic top contacts for pentacene organic thin-film transistors

We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than $10μm$⁠. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of $0.3cm2/V−s$⁠. Contact resistance extracted from these OTFTs is about $(5×107)–(5×108)Ωμm$ which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method’s value for fabricating organic electronics.