A transistor laser with a tunnel junction collector is demonstrated. Its optical output is sensitive to third terminal voltage control owing to the electron tunneling (photon-assisted or not assisted) from the base to collector, which acts in further support of resupply of holes for recombination in addition to the usual base Ohmic current, . Collector tunneling enhances laser operation even under a weak collector junction field and quenches it under a strong reverse-biased field. The sensitivity of the tunnel junction transistor laser to voltage control enables the tunnel junction transistor laser to be directly modulated by both current and voltage control.
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