A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard -type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable and reproducible memory effect changing the source-drain current by a factor , with the retention exceeding 2–3 days. Analysis of the drain current relaxation and time-resolved study of the spontaneous polarization via piezoforce scanning probe microscopy indicates that the retention loss is controlled by the interface-adjacent charge injection rather than the polarization instability. A semiquantitative model describes the time-dependent retention loss characterized by an exponential decay of the open state current of the transistor. The unique combination of properties of the ferroelectric copolymer of vinylidene fluoride and trifluoroethylene, including an adequate spontaneous polarization and low dielectric constant as well as rather benign processing demands, makes this material a promising candidate for memories fully compatible with silicon technology.
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29 June 2009
Research Article|
July 01 2009
Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Roman Gysel;
Roman Gysel
a)
1Ceramics Laboratory,
EPFL-Swiss Federal Institute of Technology
, CH-1015 Lausanne, Switzerland
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Igor Stolichnov;
Igor Stolichnov
b)
1Ceramics Laboratory,
EPFL-Swiss Federal Institute of Technology
, CH-1015 Lausanne, Switzerland
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Alexander K. Tagantsev;
Alexander K. Tagantsev
1Ceramics Laboratory,
EPFL-Swiss Federal Institute of Technology
, CH-1015 Lausanne, Switzerland
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Sebastian W. E. Riester;
Sebastian W. E. Riester
1Ceramics Laboratory,
EPFL-Swiss Federal Institute of Technology
, CH-1015 Lausanne, Switzerland
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Nava Setter;
Nava Setter
1Ceramics Laboratory,
EPFL-Swiss Federal Institute of Technology
, CH-1015 Lausanne, Switzerland
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Giovanni A. Salvatore;
Giovanni A. Salvatore
2Laboratory of Micro/Nanoelectronic Devices,
EPFL-Swiss Federal Institute of Technology
, CH-1015 Lausanne, Switzerland
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Didier Bouvet;
Didier Bouvet
2Laboratory of Micro/Nanoelectronic Devices,
EPFL-Swiss Federal Institute of Technology
, CH-1015 Lausanne, Switzerland
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Adrian M. Ionescu
Adrian M. Ionescu
2Laboratory of Micro/Nanoelectronic Devices,
EPFL-Swiss Federal Institute of Technology
, CH-1015 Lausanne, Switzerland
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a)
Electronic mail: roman.gysel@a3.epfl.ch.
b)
Electronic mail: igor.stolitchnov@epfl.ch.
Appl. Phys. Lett. 94, 263507 (2009)
Article history
Received:
February 10 2009
Accepted:
May 28 2009
Citation
Roman Gysel, Igor Stolichnov, Alexander K. Tagantsev, Sebastian W. E. Riester, Nava Setter, Giovanni A. Salvatore, Didier Bouvet, Adrian M. Ionescu; Retention in nonvolatile silicon transistors with an organic ferroelectric gate. Appl. Phys. Lett. 29 June 2009; 94 (26): 263507. https://doi.org/10.1063/1.3158959
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