Transient charge trapping and detrapping properties of a thick $SiO2/Al2O3$ stack studied by short single pulse $Id-Vg$

The transient charge trapping and detrapping of a thick $SiO2/Al2O3$ gate oxide device has been evaluated by single pulse $Id-Vg$ (PIV). During the period of a single pulse, we observed fast electron detrapping. This occurred through the gate electrode, causing a counterclockwise PIV hysteresis despite electron injections from the channel region. The hysteresis direction transitioned from counterclockwise to clockwise as a function of pulse base level and peak level. The trap energy level of $Al2O3$⁠, extracted by PIV at various temperatures, was found to be in the range of 1.14–1.39 eV, indicating the Frenkel–Poole defect band.