Characterization of blue-green $m$-plane InGaN light emitting diodes

High indium content blue-green (460–520 nm) $m$-plane InGaN light emitting diodes (LEDs) were grown on low defect-density $m$-plane GaN substrates. Systematic studies were performed on packaged blue-green LED lamps by using a range of well and barrier thicknesses. Photoluminance and electroluminance peak wavelengths increased while the well width was increased from 2 to 4 nm. The highest output power was achieved for well width of 2.5 nm. The output power improved significantly with the increase in barrier thickness. Nearly blueshift-free emission was observed in all LEDs from $1–400A/cm2$ current density under pulsed operation.