Future integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance . A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high- materials with opposite , it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A bilayer was used to elaborate capacitors displaying a voltage coefficient of associated with a density of . These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors.
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