alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard’s Law are consistent with experimental results.
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Research Article| June 23 2009
Defect interactions in random alloys
R. W. Grimes;
A. Chroneos, C. Jiang, R. W. Grimes, U. Schwingenschlögl, H. Bracht; Defect interactions in random alloys. Appl. Phys. Lett. 22 June 2009; 94 (25): 252104. https://doi.org/10.1063/1.3159468
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