We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB optical response bandwidth of 4.3 GHz. The HBLET has a current gain, as high as 30, and can be operated as a three-port device to provide simultaneously an optical and electrical output with gain. The of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that “fast” spontaneous recombination can be harnessed for high-speed modulation.
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Research Article| June 15 2009
4.3 GHz optical bandwidth light emitting transistor
C. H. Wu;
H. W. Then;
G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak; 4.3 GHz optical bandwidth light emitting transistor. Appl. Phys. Lett. 15 June 2009; 94 (24): 241101. https://doi.org/10.1063/1.3153146
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