N-rich single crystalline SiOxNy nanowires with three-dimensional (3D) branches have been synthesized and characterized. In contrast to the reported SiOxNy nanowires, our products exhibit a predominant N concentration and a single crystalline phase throughout the 3D branched structure. These properties are highly favorable for applications on which high dielectric constant and high refractive index are required. Valence electron energy-loss spectroscopy utilizing monochromated electrons reveals that the band gap of the materials is 4.4±0.2eV. Energy-loss near edge structures of Si L2,3, N K, and O K edges display a strong orbital hybridization.

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