We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an n-type buried “drain” layer beneath the p-type “base” quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only “fast” recombination (recombination lifetime τB of the order of base transit time τt). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement.

1.
R. N.
Hall
,
G. E.
Fenner
,
J. D.
Kingsley
,
T. J.
Soltys
, and
R. O.
Carlson
,
Phys. Rev. Lett.
9
,
366
(
1962
).
2.
N.
Holonyak
, Jr.
and
S. F.
Bevacqua
,
Appl. Phys. Lett.
1
,
82
(
1962
).
3.
M. I.
Nathan
,
W. P.
Dumke
,
G.
Burns
,
F. H.
Dill
, Jr.
, and
G.
Lasher
,
Appl. Phys. Lett.
1
,
62
(
1962
).
4.
T. M.
Quist
,
R. H.
Rediker
,
R. J.
Keyes
,
W. E.
Krag
,
B.
Lax
,
A. L.
McWhorter
, and
H. J.
Zeiger
,
Appl. Phys. Lett.
1
,
91
(
1962
).
5.
R. J.
Keyes
and
T. M.
Quist
,
IRE Solid State Device Research Conference
, Durham, NH,
1962
(unpublished);
See also,
R. J.
Keyes
and
T. M.
Quist
,
Proc. IRE
50
,
1822
(
1962
).
6.
J.
Heinen
,
W.
Hurber
, and
W.
Harth
,
Electron. Lett.
12
,
553
(
1976
).
7.
R. H.
Windisch
,
A.
Knobloch
,
J.
Potemans
,
B.
Dutta
,
G. H.
Dohler
,
G.
Borghs
, and
P. L.
Heremans
,
IEEE J. Sel. Top. Quantum Electron.
5
,
166
(
1999
).
8.
M.
Akbulut
,
C. H.
Chen
,
M.
Hargis
,
A. M.
Weiner
,
M. R.
Melloch
, and
J. M.
Woodall
,
IEEE Photon. Technol. Lett.
13
,
85
(
2001
).
9.
C. H.
Chen
,
M.
Hargis
,
J. M.
Woodall
,
M. R.
Melloch
,
J. S.
Reynolds
,
W.
Wang
, and
E.
Yablonovitch
,
Appl. Phys. Lett.
74
,
3140
(
1999
).
10.
M.
Feng
,
N.
Holonyak
, Jr.
, and
W.
Hafez
,
Appl. Phys. Lett.
84
,
151
(
2004
).
11.
M.
Feng
,
N.
Holonyak
, Jr.
, and
R.
Chan
,
Appl. Phys. Lett.
84
,
1952
(
2004
).
12.
G.
Walter
,
N.
Holonyak
, Jr.
,
M.
Feng
, and
R.
Chan
,
Appl. Phys. Lett.
85
,
4768
(
2004
).
13.
C. H.
Wu
,
G.
Walter
,
H. W.
Then
,
M.
Feng
, and
N.
Holonyak
, Jr.
,
Appl. Phys. Lett.
94
,
171101
(
2009
).
14.
G.
Walter
,
C. H.
Wu
,
H. W.
Then
,
M.
Feng
, and
N.
Holonyak
, Jr.
,
Appl. Phys. Lett.
(unpublished).
15.
M.
Feng
,
N.
Holonyak
, Jr.
,
H. W.
Then
, and
G.
Walter
,
Appl. Phys. Lett.
91
,
053501
(
2007
).
16.
M. G.
Craford
,
High Brightness Light Emitting Diodes, Semiconductors and Semimetals
(
Academic
,
New York
,
1997
), Vol.
48
, p.
56
.
17.
J. J.
Wierer
,
D. A.
Kellogg
, and
N.
Holonyak
, Jr.
,
Appl. Phys. Lett.
74
,
926
(
1999
).
18.
T. J.
de Lyon
,
J. M.
Woodall
,
D. T.
McInturff
,
P. D.
Kirchner
,
J. A.
Kash
,
R. J. S.
Bates
,
R. T.
Hodgson
, and
F.
Cardone
,
Appl. Phys. Lett.
59
,
402
(
1991
).
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