We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an -type buried “drain” layer beneath the -type “base” quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only “fast” recombination (recombination lifetime of the order of base transit time ). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement.
© 2009 American Institute of Physics.
2009
American Institute of Physics
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