We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an -type buried “drain” layer beneath the -type “base” quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only “fast” recombination (recombination lifetime of the order of base transit time ). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement.
REFERENCES
1.
R. N.
Hall
, G. E.
Fenner
, J. D.
Kingsley
, T. J.
Soltys
, and R. O.
Carlson
, Phys. Rev. Lett.
9
, 366
(1962
).2.
N.
Holonyak
, Jr. and S. F.
Bevacqua
, Appl. Phys. Lett.
1
, 82
(1962
).3.
M. I.
Nathan
, W. P.
Dumke
, G.
Burns
, F. H.
Dill
, Jr., and G.
Lasher
, Appl. Phys. Lett.
1
, 62
(1962
).4.
T. M.
Quist
, R. H.
Rediker
, R. J.
Keyes
, W. E.
Krag
, B.
Lax
, A. L.
McWhorter
, and H. J.
Zeiger
, Appl. Phys. Lett.
1
, 91
(1962
).5.
R. J.
Keyes
and T. M.
Quist
, IRE Solid State Device Research Conference
, Durham, NH, 1962
(unpublished);See also,
R. J.
Keyes
and T. M.
Quist
, Proc. IRE
50
, 1822
(1962
).6.
J.
Heinen
, W.
Hurber
, and W.
Harth
, Electron. Lett.
12
, 553
(1976
).7.
R. H.
Windisch
, A.
Knobloch
, J.
Potemans
, B.
Dutta
, G. H.
Dohler
, G.
Borghs
, and P. L.
Heremans
, IEEE J. Sel. Top. Quantum Electron.
5
, 166
(1999
).8.
M.
Akbulut
, C. H.
Chen
, M.
Hargis
, A. M.
Weiner
, M. R.
Melloch
, and J. M.
Woodall
, IEEE Photon. Technol. Lett.
13
, 85
(2001
).9.
C. H.
Chen
, M.
Hargis
, J. M.
Woodall
, M. R.
Melloch
, J. S.
Reynolds
, W.
Wang
, and E.
Yablonovitch
, Appl. Phys. Lett.
74
, 3140
(1999
).10.
M.
Feng
, N.
Holonyak
, Jr., and W.
Hafez
, Appl. Phys. Lett.
84
, 151
(2004
).11.
M.
Feng
, N.
Holonyak
, Jr., and R.
Chan
, Appl. Phys. Lett.
84
, 1952
(2004
).12.
G.
Walter
, N.
Holonyak
, Jr., M.
Feng
, and R.
Chan
, Appl. Phys. Lett.
85
, 4768
(2004
).13.
C. H.
Wu
, G.
Walter
, H. W.
Then
, M.
Feng
, and N.
Holonyak
, Jr., Appl. Phys. Lett.
94
, 171101
(2009
).14.
G.
Walter
, C. H.
Wu
, H. W.
Then
, M.
Feng
, and N.
Holonyak
, Jr., Appl. Phys. Lett.
(unpublished).15.
M.
Feng
, N.
Holonyak
, Jr., H. W.
Then
, and G.
Walter
, Appl. Phys. Lett.
91
, 053501
(2007
).16.
M. G.
Craford
, High Brightness Light Emitting Diodes, Semiconductors and Semimetals
(Academic
, New York
, 1997
), Vol. 48
, p. 56
.17.
J. J.
Wierer
, D. A.
Kellogg
, and N.
Holonyak
, Jr., Appl. Phys. Lett.
74
, 926
(1999
).18.
T. J.
de Lyon
, J. M.
Woodall
, D. T.
McInturff
, P. D.
Kirchner
, J. A.
Kash
, R. J. S.
Bates
, R. T.
Hodgson
, and F.
Cardone
, Appl. Phys. Lett.
59
, 402
(1991
).© 2009 American Institute of Physics.
2009
American Institute of Physics
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