We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an -type buried “drain” layer beneath the -type “base” quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only “fast” recombination (recombination lifetime of the order of base transit time ). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement.
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Research Article| June 12 2009
Tilted-charge high speed (7 GHz) light emitting diode
C. H. Wu;
H. W. Then;
G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak; Tilted-charge high speed (7 GHz) light emitting diode. Appl. Phys. Lett. 8 June 2009; 94 (23): 231125. https://doi.org/10.1063/1.3154565
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