Resistance switching at the $Al/SrTiO3−xNy$ anode interface

The electroformation and resistance switching behavior of $Al/SrTiO3−xNy/Al$ have been investigated. The resistance of $Al/SrTiO3−xNy/Al$ irreversibly increases when voltages higher than a certain threshold voltage are applied. A bistable resistance switching develops at one of the Al electrodes that performs as the anode. The formation of stacking faults in $SrTiO3−xNy$ during preparation by microwave plasma treatment is a prerequisite for the occurrence of switching as confirmed by site-specific high resolution transmission electron microscopy at the electrode interfaces. The resistance switching effect is discussed by considering the role of stacking fault defects in the oxygen/nitrogen diffusion at the anode metal-oxynitride interface.