The polarization properties of InGaN quantum wells on semipolar AlInGaN alloy substrates are calculated numerically using a Hamiltonian. It is shown that the polarization direction of quantum-well emission changes, depending on the substrate alloy composition and quantum-well width, and that this polarization switching is caused by the strain anisotropy and quantum confinement effects in the quantum wells. The calculation results indicate that InGaN or AlInGaN alloy substrates can be beneficial in obtaining desirable polarization properties for the formation of cleaved-facet cavity mirrors in laser diodes on semipolar substrates.
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