We have grown thin films on (100) and fused silica substrates by pulsed laser deposition. The films on are -axis oriented and partially in-plane aligned with multiple domains, while the films on fused silica are preferred -axis oriented without in-plane alignment. The Seebeck coefficient and resistivity of films on both substrates are comparable to those of single crystals. An oxide heterojunction was formed by depositing film on Nb-doped single crystal, which showed a rectifying behavior. These thin films and heterostructures may be used for future thermoelectric applications.
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