Indentation-induced low-temperature solid-phase crystallization of $Si1−xGex$ $(x=–1)$ on insulator Available to Purchase

Indentation-induced solid-phase crystallization (SPC) was proposed to achieve low-temperature growth of $Si1−xGex$ $(x=0–1)$ on insulator. Crystal nucleation was enhanced at the indented positions due to the stress effect, which triggered the lateral SPC. As a result, large $Si1−xGex$ $(x=0–1)$ crystal regions $(>2μm)$ were achieved on insulator at low temperatures $(<590°C)$⁠. The growth kinetics for this catalyst metal-free process, i.e., activation energies for nucleation and lateral growth, are presented as a function of the Ge fraction $(x)$⁠.