The chemical state of Ge in gate stacks and electrical property correlations are investigated to understand their capacitance scaling potential. We obtained gate stacks with low interface state density and a small capacitance equivalent oxide thickness (CET) of by nitridation of Ge (100) and atomic layer deposition of . The nitrogen content of the affects both the crystalline structure of the overlying and Ge diffusion into the . Introduction of Ge impurity by forming gas anneal coincided with the formation of a higher- phase, consistent with CET reduction.
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