We demonstrate fabrication of vertically aligned, intrananowire diodes by large-area epitaxial growth of Si nanowires (NWs). The axially modulated doping profile of junctions is achieved by in situ doping with alternating addition of dopants in the axial sequence during Au-assisted chemical vapor deposition. We provide direct evidence of the intra-NW junctions using scanning local probes in both individual NWs and vertically aligned NWs at large areas. Our study suggests implication for integrated electronics and optoelectronics based on bottom-up Si NWs.
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.© 2009 American Institute of Physics.
2009
American Institute of Physics
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