We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.

1.
Y. E.
Lozovik
and
V. I.
Yudson
,
JETP Lett.
22
,
556
(
1975
);
S. I.
Shevchenko
,
Sov. J. Low Temp. Phys.
2
,
251
(
1976
).
2.
U.
Sivan
,
P. M.
Solomon
, and
H.
Shtrikman
,
Phys. Rev. Lett.
68
,
1196
(
1992
);
[PubMed]
S.
Shapira
,
U.
Sivan
,
P. M.
Solomon
,
E.
Buchstab
,
M.
Tischler
, and
G.
Ben Yoseph
,
Phys. Rev. Lett.
77
,
3181
(
1996
);
[PubMed]
M.
Pohlt
,
M.
Lynass
,
J. G. S.
Lok
,
W.
Dietsche
,
K. v.
Klitzing
, and
K.
Eberl
,
Appl. Phys. Lett.
80
,
2105
(
2002
);
J. A.
Keogh
,
K.
Das Gupta
,
H. E.
Beere
,
D. A.
Ritchie
, and
M.
Pepper
,
Appl. Phys. Lett.
87
,
202104
(
2005
);
J. A.
Seamons
,
D. R.
Tibbetts
,
J. L.
Reno
, and
M. P.
Lilly
,
Appl. Phys. Lett.
90
,
052103
(
2007
).
3.
G.
Vignale
and
A. H.
MacDonald
,
Phys. Rev. Lett.
76
,
2786
(
1996
).
4.
K. v.
Klitzing
,
G.
Dorda
, and
M.
Pepper
,
Phys. Rev. Lett.
45
,
494
(
1980
);
S.
Kravchenko
,
G. V.
Kravchenko
,
J. E.
Furneaux
,
V. M.
Pudalov
, and
M.
D’Iorio
,
Phys. Rev. B
50
,
8039
(
1994
);
K.
Hubner
and
W.
Shockley
,
Phys. Rev. Lett.
4
,
504
(
1960
).
5.
K.
Takashina
,
B.
Gaillard
,
Y.
Ono
, and
Y.
Hirayama
,
Proceedings of the 2006 International Conference on Solid State Devices and Materials
, Yokohama,
2006
(unpublished), pp.
830
831
.
6.
M.
Prunnila
,
S. J.
Laakso
,
J. M.
Kivioja
, and
J.
Ahopelto
,
Appl. Phys. Lett.
93
,
112113
(
2008
).
7.
K.
Takashina
,
B.
Gaillard
,
Y.
Ono
, and
Y.
Hirayama
,
Jpn. J. Appl. Phys., Part 1
46
,
2596
(
2007
).
8.
X. G.
Feng
,
D.
Popovic
, and
S.
Washburn
,
Phys. Rev. Lett.
83
,
368
(
1999
).
9.
K.
Takashina
,
A.
Fujiwara
,
S.
Horiguchi
,
Y.
Takahashi
, and
Y.
Hirayama
,
Phys. Rev. B
69
,
161304
(
2004
).
10.
K.
Takashina
,
Y.
Ono
,
A.
Fujiwara
,
Y.
Takahashi
, and
Y.
Hirayama
,
Phys. Rev. Lett.
96
,
236801
(
2006
).
11.
K.
Takashina
,
M.
Brun
,
T.
Ota
,
D. K.
Maude
,
A.
Fujiwara
,
Y.
Ono
,
Y.
Takahashi
, and
Y.
Hirayama
,
Phys. Rev. Lett.
99
,
036803
(
2007
).
12.
Peak mobilities are around 0.2 and 0.8m2/Vs for holes and electrons, respectively.
13.
T. J.
Gramila
,
J. P.
Eisenstein
,
A. H.
MacDonald
,
L. N.
Pfeifer
, and
K. W.
West
,
Phys. Rev. Lett.
66
,
1216
(
1991
).
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