Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C band

We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is $44×103$ with an ultralow modal volume of the order of $1.2(λ/n)3$⁠, inducing an enhancement in the spontaneous emission rate of up a factor of 2.8 at 300 K.