Three-dimensional organic field-effect transistors with high output current and high on-off ratio

High-performance three-dimensional organic field-effect transistors are developed with multiple vertical channels of organic semiconductors. Advanced processes of vacuum depositing high-mobility and air-stable dinaphtho[2,3-b:$2′,3′$-f]thieno[3,2-b]thiophene thin films on a series of horizontally elongated vertical walls have maximized the output current to $0.60A/cm2$ area with the application of −10 V for both drain-source and gate voltages. The on-off ratio is as high as $106$⁠. Carrier mobility of the organic semiconductor is typically $0.30cm2/Vs$ and deviation among ten devices is within 10%. The performance meets requirement for such application as driving organic light-emitting diodes in active-matrix displays.