Electrical characteristics of metal-insulator-metal capacitors with various Al2O3HfO2 nanolaminates are investigated. The results indicate that the breakdown field decreases with increasing the HfO2 individual-layer (IL) thickness. Concerning the same dielectric composition, the insulator with a thinner HfO2 IL also exhibits a significant improvement in the electrical breakdown and leakage characteristics. This is attributed to enhanced crystallization of the thicker HfO2 ILs. The insulator with alternate 1nmAl2O3 and 5nmHfO2 exhibits a breakdown field of 3.85MVcm at 125°C, and a leakage current of 9.6×108Acm2 at 1MVcm and 200°C. Further, it is revealed that the conduction mechanism in the high field range is dominated by the Poole–Frenkel emission with intrinsic trap energy of 1.91eV.

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