We have investigated the emission of the terahertz electromagnetic wave from an undoped GaAs (200nm)n-type GaAs (3μm) epitaxial layer structure (i-GaAsn-GaAs structure), where the doping concentration of the n-GaAs layer is 3×1018cm3. It is found that the first-burst amplitude of terahertz wave of the i-GaAsn-GaAs sample is remarkably larger than that of a n-GaAs crystal, which means that the i-GaAs layer enhances the terahertz emission intensity. The first-burst amplitude of the i-GaAsn-GaAs sample, by tuning the pump-beam energy to the higher energy side, exceeds that of an i-InAs crystal that is known as one of the most intense terahertz emitters. We, therefore, conclude that the i-GaAsn-GaAs structure is useful to obtain intense terahertz emission.

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