The dynamic response of InAsP quantum dots, grown on InP(001) substrates by low-pressure metalorganic vapor phase epitaxy emitting around , is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from at low temperature to reach at while the integrated photoluminescence intensity decreases only by a factor of . These characteristics give evidence that such quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated nonradiative recombination up to room temperature.
© 2008 American Institute of Physics.
2008
American Institute of Physics
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