Time-resolved characterization of $InAsP∕InP$ quantum dots emitting in the $C$-band telecommunication window

The dynamic response of InAsP quantum dots, grown on InP(001) substrates by low-pressure metalorganic vapor phase epitaxy emitting around $1.55μm$⁠, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from $1ns$ at low temperature to reach $4ns$ at $300K$ while the integrated photoluminescence intensity decreases only by a factor of $23$⁠. These characteristics give evidence that such $InAsP∕InP$ quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated nonradiative recombination up to room temperature.