The dynamic response of InAsP quantum dots, grown on InP(001) substrates by low-pressure metalorganic vapor phase epitaxy emitting around , is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from at low temperature to reach at while the integrated photoluminescence intensity decreases only by a factor of . These characteristics give evidence that such quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated nonradiative recombination up to room temperature.
Time-resolved characterization of quantum dots emitting in the -band telecommunication window
R. Hostein, A. Michon, G. Beaudoin, N. Gogneau, G. Patriache, J.-Y. Marzin, I. Robert-Philip, I. Sagnes, A. Beveratos; Time-resolved characterization of quantum dots emitting in the -band telecommunication window. Appl. Phys. Lett. 18 August 2008; 93 (7): 073106. https://doi.org/10.1063/1.2965112
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