$SmScO3$ thin films as an alternative gate dielectric

Samarium scandate thin films deposited on (100) Si have been investigated structurally and electrically. Rutherford backscattering spectrometry and transmission electron microscopy results show that the films are stoichiometric, amorphous, and smooth. X-ray diffraction analysis indicates that $SmScO3$ starts to crystallize at $900°C$⁠. Capacitance and leakage current measurements reveal $C-V$ curves with negligible hysteresis, a dielectric constant around 29 for 6 nm thick films, low leakage current densities in the range of $10−7A/cm2$⁠, an effective oxide charge density of $∼5×1011cm−2$⁠, and an interface trap density of $4.5×1011(eVcm2)−1$⁠.