The metal-insulator-metal (MIM) capacitor for analog and rf applications has been developed with laminate as the dielectric. The high capacitance density of can be achieved due to the tetragonal which makes the higher dielectric constant of 38.7. This MIM capacitor also demonstrates the quadratic voltage coefficient of and the good leakage current of at which is ascribed to the inserted . Since the Schottky emission is suggested as the major dielectric conduction mechanism, a further reduced quadratic voltage coefficient and leakage characteristic can be realized by using a high work-function electrode. The combination of the promising electrical properties and the desirable process integration renders this structure highly suitable for advanced MIM capacitors.
High density metal-insulator-metal capacitor based on laminate dielectric
Yung-Hsien Wu, Chien-Kang Kao, Bo-Yu Chen, Yuan-Sheng Lin, Ming-Yen Li, Hsiao-Che Wu; High density metal-insulator-metal capacitor based on laminate dielectric. Appl. Phys. Lett. 21 July 2008; 93 (3): 033511. https://doi.org/10.1063/1.2958238
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