We analyze the influence of isotope disorder on longitudinal optical (LO) phonon modes in GaN and then study the scattering by disordered LO phonons in the channel of high power transistor. Results indicate that as a larger number of LO phonons gets excited, a more efficient cooling of electrons can be accomplished and most of the spurious hot phonon effects can be mitigated leading to significant improvement in the saturation velocity. To the best of our knowledge this is the first ever example of disorder playing constructive role in the performance of room-temperature electronic devices.
Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors
Jacob B. Khurgin, Debdeep Jena, Yujie J. Ding; Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors. Appl. Phys. Lett. 21 July 2008; 93 (3): 032110. https://doi.org/10.1063/1.2961120
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