Vertical structures of SiO2 sandwiched between a top tungsten electrode and conducting nonmetallic substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1μs) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 104 were demonstrated.

1.
R.
Waser
and
M.
Aono
,
Nature Mater.
6
,
833
(
2007
).
2.
C.
Rohde
,
B. J.
Choi
,
D. S.
Jeong
,
S.
Choi
,
J.
Zhao
, and
C. S.
Hwang
,
Appl. Phys. Lett.
86
,
262907
(
2005
).
3.
S.
Seo
,
M. J.
Lee
,
D. H.
Seo
,
E. J.
Jeoung
,
D. -S.
Suh
,
Y. S.
Joung
,
I. K.
Yoo
,
I. R.
Hwang
,
S. H.
Kim
,
I. S.
Byun
,
J. -S.
Kim
,
J. S.
Choi
, and
B. H.
Park
,
Appl. Phys. Lett.
85
,
5655
(
2004
).
4.
W. R.
Hiatt
and
T. W.
Hickmott
,
Appl. Phys. Lett.
6
,
106
(
1965
).
5.
Y.
Watanabe
,
J. G.
Bednorz
,
A.
Bietsch
,
Ch.
Gerber
,
D.
Widmer
,
A.
Beck
, and
S. J.
Wind
,
Appl. Phys. Lett.
78
,
3738
(
2001
).
6.
M.
Fujimoto
,
H.
Koyama
,
S.
Kobayashi
,
Y.
Tamai
,
N.
Awaya
,
Y.
Nishi
, and
T.
Suzuki
,
Appl. Phys. Lett.
89
,
243504
(
2006
).
7.
C.
Schindler
,
S. C. P.
Thermadam
,
R.
Waser
, and
M. N.
Kozicki
,
IEEE Trans. Electron Devices
54
,
2762
(
2007
).
8.
G.
Dearnaley
,
A. M.
Stoneham
, and
D. V.
Morgan
,
Rep. Prog. Phys.
33
,
1129
(
1970
).
9.
J. G.
Simmons
and
R. R.
Verderber
,
Proc. R. Soc. London, Ser. A
301
,
77
(
1967
).
10.
G.
Dearnaley
,
D. V.
Morgan
, and
A. M.
Stoneham
,
J. Non-Cryst. Solids
4
,
593
(
1970
).
11.
G.
Dearnaley
,
Thin Solid Films
3
,
161
(
1969
).
12.
R. E.
Thurstans
,
P. C.
Wild
, and
D. P.
Oxlety
,
Thin Solid Films
20
,
281
(
1974
).
13.
M.
Shatzkes
,
M.
Av-Ron
, and
R. M.
Anderson
,
J. Appl. Phys.
45
,
2065
(
1974
).
14.
A.
Beck
,
J. G.
Bednorz
,
Ch.
Gerber
,
C.
Rossel
, and
D.
Widmer
,
Appl. Phys. Lett.
77
,
139
(
2000
).
15.
See EPAPS Document No. E-APPLAB-93-010850 for resistance-temperature figures and switching in a device with ON-OFF ratio approaching 106. For more information on EPAPS, see http://www.aip.org/pubservs/epaps.html.

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