Vertical structures of sandwiched between a top tungsten electrode and conducting nonmetallic substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over were demonstrated.
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See EPAPS Document No. E-APPLAB-93-010850 for resistance-temperature figures and switching in a device with ON-OFF ratio approaching . For more information on EPAPS, see http://www.aip.org/pubservs/epaps.html.
© 2008 American Institute of Physics.
2008
American Institute of Physics
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