Amorphous thin film transistors (TFTs) were fabricated on polyimide clean-room tape at low temperature . The films with an -type carrier concentration of were deposited by rf-magnetron sputtering in a mixed ambient of . The bottom-gate-type TFTs showed good saturation mobility , drain current on-to-off ratio of approximately , threshold voltage of 1.1 V, and subthreshold gate-voltage swing of . These results were comparable to those of the same oxide TFTs that we have fabricated on either glass or polyethylene terephthalate substrates. The results demonstrate that even polyimide clean-room tape can be an appropriate substrate for inexpensive-flexible-adhesive-transparent electronic devices.
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