We report on high-performance -channel thin-film transistors (TFTs) fabricated using amorphous indium gallium zinc oxide and amorphous as the channel and gate dielectric layers, respectively. TFTs achieve low-voltage operation with a high saturation mobility value of , excellent subthreshold slopes of /decade, a low threshold voltage of , and a high on-off current ratio up to at . The high capacitance density of and the small contact resistance, smaller than the channel resistance, are responsible for the high performance of these TFTs.
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