We demonstrate that the average output power of the terahertz pulses generated by difference-frequency generation in stacked GaAs wafers is scaled up by a factor of 160. Such power scaling is made possible by achieving first-order quasiphase matching for the efficient terahertz conversion in stacked thick (110) GaAs wafers using two laser pulses. The highest average output power is measured to be by stacking ten wafers.
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© 2008 American Institute of Physics.
2008
American Institute of Physics
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