Performance comparison of $Pb(Zr0.52Ti0.48)O3$-only and $Pb(Zr0.52Ti0.48)O3$-on-silicon resonators

This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance $(RX)$ and quality factor $(Q)$ with the resonators’ silicon layer thickness $(tSi)$⁠. For identical lateral dimensions and PZT-layer thicknesses $(tPZT)$⁠, the PZT-on-silicon resonator has higher resonant frequency $(fC)$⁠, higher $Q$ (5100 versus 140), lower $RX$ (⁠$51Ω$ versus $205Ω$⁠), and better linearity [third-order input intercept point $(IIP3)$ of $+43.7dBm$ versus $+23.3dBm$]. In contrast, the PZT-only resonator demonstrated much wider frequency tuning range (5.1% versus 0.2%).