Effect of C incorporation on relaxation of SiGe/Si Available to Purchase

Thin fully strained $Si1−xGex/Si1−x−yGexCy/Si1−xGex$ heterostructures $(x=0.2)$⁠, with controlled C incorporation sites, were grown on Si substrates using ultrahigh vacuum chemical vapor deposition. Following the growth, layers were relaxed using rapid thermal annealing at $1000°C$ for 30 s, and high degrees of relaxation of 65% and 59% were achieved with and without interstitial C, respectively. We show that the difference in cross hatch density and step height between two samples, which correspond to different misfit dislocation pileup behaviors, suggests controllability of SiGe relaxation via variation in C incorporation sites in the SiGeC layer.