The onset time of photocrystallization (PC) as a function of temperature in a-Se films designed for avalanche photodetectors is explored using Raman scattering experiments. The PC onset time τon is compared to the time-constant τIPD for irreversible photodarkening (IPD) studied in earlier work. Both τon and τIPD exhibit activated thermal behavior mediated by an energy barrier EB0.70.95eV. We suggest that the formation kinetics of PC and IPD in a-Se are governed by the same energy surface and configuration changes, occurring via photoinduced defects during the primary stage of crystallization.

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