The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be below that of AlN. Together with the resulting conduction band offset of , this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.
Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
T. D. Veal, P. D. C. King, S. A. Hatfield, L. R. Bailey, C. F. McConville, B. Martel, J. C. Moreno, E. Frayssinet, F. Semond, J. Zúñiga-Pérez; Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy. Appl. Phys. Lett. 17 November 2008; 93 (20): 202108. https://doi.org/10.1063/1.3032911
Download citation file: