Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate

Phonon-assisted anti-Stokes photoluminescence (ASPL) in the ultraviolet region has been observed in the GaN film grown on a Si (111) substrate. The ASPL peaks are observable only at sufficiently low temperatures. In addition, even if the photon energy is $≈318meV$ below the transition energy for bound excitons, the ASPL peaks can be still observed. Based on our analysis, the donor-acceptor pairs and bound excitons have played primary roles in the generation of ASPL. Upon the absorption of photons, the ionizations of the neutral donors and neutral acceptors are assisted by longitudinal-optical phonons.