Light sensitive phototransistor based on the composite of poly(3-hexylthiophene) and nanoparticles has been developed. The device shows a quick change in channel current under light exposure, which can be attributed to a positive shift of the threshold voltage, while no change in the field effect mobility and off current can be observed. The shift of the threshold voltage is induced by accumulated electrons trapped by the nanoparticles in the channel. The photosensitivity of the device has been found to be dependent on the concentration of nanoparticles, the incident wavelength and the voltage between the source and drain.
REFERENCES
1.
H.
Sirringhaus
, Adv. Mater. (Weinheim, Ger.)
17
, 2411
(2005
).2.
Y.
Hong
, F.
Yan
, P.
Migliorato
, S. H.
Han
, and J.
Jang
, Thin Solid Films
515
, 4032
(2007
).3.
F.
Yan
, Y.
Hong
, and P.
Migliorato
, J. Appl. Phys.
101
, 064501
(2007
).4.
M. A.
Romeo
, M. A. G.
Martinez
, and P. R.
Herczfeld
, IEEE Trans. Microwave Theory Tech.
44
, 2279
(1996
).5.
M.
Debucquoy
, S.
Verlaak
, S.
Steudel
, K.
Myny
, J.
Genoe
, and P.
Heremans
, Appl. Phys. Lett.
91
, 103508
(2007
).6.
7.
B.
Park
, P.
Paoprasert
, I.
In
, J.
Zwickey
, P. E.
Colavita
, R. J.
Hamers
, P.
Gopalan
, and P.
Evans
, Adv. Mater. (Weinheim, Ger.)
19
, 43553
(2007
).8.
Y.
Hu
, G.
Dong
, C.
Liu
, L.
Wang
, and Y.
Qiu
, Appl. Phys. Lett.
89
, 072108
(2006
).9.
Y. Y.
Noh
, D. Y.
Kim
, Y.
Yoshida
, K.
Yase
, B. J.
Jung
, and E.
Lim
, Appl. Phys. Lett.
86
, 043501
(2005
).10.
V.
Podzorov
and M. E.
Gershenson
, Phys. Rev. Lett.
95
, 016602
(2005
).11.
T. P. I.
Saragi
, K.
Onken
, I.
Suske
, T.
Fuhemann-Lieker
, and J.
Salbeck
, Opt. Mater. (Amsterdam, Neth.)
29
, 1332
(2007
).12.
T. P. I.
Saragi
, R.
Pudzich
, T.
Fuhrmann
, and J.
Salbeck
, Appl. Phys. Lett.
84
, 2334
(2004
).13.
M. C.
Hamilton
, S.
Martin
, and J.
Kanicki
, IEEE Trans. Electron Devices
51
, 877
(2004
).14.
K. S.
Narayan
and N.
Kumar
, Appl. Phys. Lett.
79
, 1891
(2001
).15.
N.
Marjanovic
, T. B.
Singh
, G.
Dennler
, S.
Gunes
, H.
Neugebauer
, N. S.
Sariciftci
, R.
Schwodiauer
, and S.
Bauer
, Org. Electron.
7
, 188
(2007
).16.
H.
Sirringhaus
, N.
Tessler
, and R. H.
Friend
, Science
280
, 1741
(1998
).17.
J. E.
Kroeze
, T. J.
Savenije
, M. J. W.
Vermeulen
, and J. M.
Warman
, J. Phys. Chem. B
107
, 7696
(2003
).18.
H. C.
Shin
, I. S.
Lim
, M.
Racanelli
, W. L. M.
Huang
, J.
Foerster
, and B. Y.
Hwang
, IEEE Trans. Electron Devices
43
, 318
(1996
).19.
F.
Yan
, P.
Migliorato
, and R.
Ishihara
, Appl. Phys. Lett.
88
, 153507
(2006
).20.
P.
Peumans
and S. R.
Forrest
, Chem. Phys. Lett.
398
, 27
(2004
).21.
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2008
American Institute of Physics
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