20-nm-gate-length erbium-/platinum-silicided n-p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm-gate-length n-p-type SB-MOSFETs showed large on/off current ratio (>106) with low leakage current less than 105μAμm due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and 376μAμm when drain and gate voltages are 22 and 33V, for the n-p-type SB-MOSFET, respectively.

1.
E.
Dubios
and
G.
Larrieu
,
J. Appl. Phys.
96
,
729
(
2004
).
2.
M.
Jang
,
Y.
Kim
,
J.
Shin
,
S.
Lee
, and
K.
Park
,
Appl. Phys. Lett.
84
,
741
(
2004
).
3.
M.
Fritze
,
C. L.
Chen
,
S.
Calawa
,
D.
Yost
,
B.
Wheeler
,
P.
Wyatt
,
C. L.
Keast
,
J.
Snyder
, and
J.
Larson
,
IEEE Electron Device Lett.
25
,
220
(
2004
).
4.
D.
Connelly
,
C.
Faulkner
, and
D. E.
Grupp
,
IEEE Electron Device Lett.
24
,
411
(
2003
).
5.
L. E.
Calvet
,
H.
Luebben
,
M. A.
Reed
,
C.
Wang
,
J. P.
Snyder
, and
J. R.
Tucker
,
J. Appl. Phys.
91
,
757
(
2002
).
6.
J.
Kedzierski
,
P.
Xuan
,
Erik H.
Anderson
,
J.
Bokor
,
T. J.
King
, and
C.
Hu
,
Tech. Dig. - Int. Electron Devices Meet.
2000
,
57
(
2000
).
7.
M.
Jang
,
Y.
Kim
,
J.
Shin
, and
S.
Lee
,
Mater. Sci. Eng., B
114–115
,
51
(
2004
).
8.
M.
Jang
,
Y.
Kim
,
J.
Shin
, and
S.
Lee
,
IEEE Electron Device Lett.
26
,
354
(
2005
).
9.
M.
Jang
,
Y.
Kim
,
M.
Jeon
,
C.
Choi
,
I.
Baek
,
S.
Lee
, and
B.
Park
,
IEEE Trans. Electron Devices
53
,
1821
(
2006
).
10.
S. M.
Sze
,
Physics of Semiconductor Devices
(
Wiley
,
New York
,
1981
), pp.
469
486
.
11.
M.
Jun
,
M.
Jang
,
Y.
Kim
,
C.
Choi
,
T.
Kim
,
S.
Oh
, and
S.
Lee
,
J. Vac. Sci. Technol. B
26
,
137
(
2008
).
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