In this work we extend the droplet epitaxy growth technique to the fabrication of low density InAs quantum dots (QDs) on GaAs (001) substrates with control in size, energy emission, and top surface location. In particular, depending on the amount of InAs material deposited, it has been possible to tune the QD energy emission over a range of 1.12–1.40 eV while keeping constant the nanostructures density at . Moreover, the capping growth process of these QD shows mounding features that permit their spatial identification once embedded by a GaAs capping layer.
Low density InAs quantum dots with control in energy emission and top surface location
P. Alonso-González, D. Fuster, L. González, J. Martín-Sánchez, Y. González; Low density InAs quantum dots with control in energy emission and top surface location. Appl. Phys. Lett. 3 November 2008; 93 (18): 183106. https://doi.org/10.1063/1.3021070
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