The electrical properties of Mg-doped a-plane Ga1xInxN(0<x<0.30) films on undoped GaN grown by sidewall-epitaxial-lateral overgrowth on +0.5°-off r-plane sapphire substrates by metalorganic vapor phase epitaxy were systematically investigated. The activation energy of Mg acceptors in a-plane Ga0.83In0.17N was as small as 48 meV. Therefore, highly Mg-doped a-plane GaInN with a high hole concentration can be realized. A maximum hole concentration of as high as 1.7×1019cm3 in Ga0.71In0.29N was reproducibly achieved at room temperature.

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