The electrical properties of Mg-doped -plane films on undoped GaN grown by sidewall-epitaxial-lateral overgrowth on -off -plane sapphire substrates by metalorganic vapor phase epitaxy were systematically investigated. The activation energy of Mg acceptors in -plane was as small as 48 meV. Therefore, highly Mg-doped -plane GaInN with a high hole concentration can be realized. A maximum hole concentration of as high as in was reproducibly achieved at room temperature.
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