Resistivity of individual molecular-assembly nanowires was characterized using the point-contact current-imaging atomic force microscope (PCI-AFM). Current images were simultaneously obtained along with topographic images, from which the mean electrical resistivity of each nanowire was deduced to be approximately 180Ωcm, which was about two orders of magnitude lower than that measured on bulk Langmuir–Blodgett films (103105Ωcm).

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See EPAPS Document No. E-APPLAB-93-003844 for details about the experiment, all date including dRdx, resistivity (ρ), cross sectional area (S) and distance from the edge of electrode (d0) of nanowires (NW0-NW8) (Table S1), plot of resistivity of each nanowire (NW0-NW8) as a function of d0 (Fig. S1) and schematic view of the estimation of x and d0 (Fig. S2). For more information on EPAPS, see http://www.aip.org/pubservs/epaps.html.

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