The epitaxial thin films of LaFeAsO were fabricated on MgO(001) and mixed-perovskite single-crystal substrates by pulsed laser deposition using a Nd-doped yttrium aluminum garnet second harmonic source and a F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at , which is explained by ab initio calculations.
REFERENCES
1.
Y.
Kamihara
et al., J. Am. Chem. Soc.
130
, 3296
(2008
).2.
H.
Takahashi
et al., Nature (London)
453
, 376
(2008
).3.
X. H.
Chen
et al., Nature (London)
453
, 761
(2008
);Z.-A.
Ren
et al., Chin. Phys. Lett.
25
, 2215
(2008
).4.
G. F.
Chen
et al., Chin. Phys. Lett.
25
, 3403
(2008
).5.
P.
Quebe
et al., J. Alloys Compd.
302
, 70
(2000
);Y.
Jia
et al., Appl. Phys. Lett.
93
, 032503
(2008
);Y.
Jia
, P.
Cheng
, L.
Fang
, H.
Luo
, H.
Yang
, C.
Ren
, L.
Shan
, C.
Gu
, and H.-H.
Wen
,Supercond. Sci. Technol.
21
, 105018
(2008
).6.
H.
Ohta
et al., Adv. Funct. Mater.
13
, 139
(2003
).7.
H.
Hiramatsu
et al., Appl. Phys. Lett.
81
, 598
(2002
);H.
Hiramatsu
et al., J. Mater. Res.
19
, 2137
(2004
);K.
Kayanuma
et al., Thin Solid Films
516
, 5800
(2008
).8.
J.
Tate
et al., Thin Solid Films
516
, 5795
(2008
);R.
Kykyneshi
et al., Solid State Sci.
10
, 921
(2008
).9.
Bruker AXS
, TOPAS, Version 3, Bruker AXS, Karlsruhe, Germany, 2005
.10.
T.
Nomura
et al., arXiv:0804.3569v1.11.
C.
de la Cruz
et al., Nature (London)
453
, 899
(2008
).12.
P. E.
Blöchl
, Phys. Rev. B
50
, 17953
(1994
);G.
Kresse
and D.
Joubert
, Phys. Rev. B
59
, 1758
(1999
).13.
G.
Kresse
and J.
Furthmüller
, Phys. Rev. B
54
, 11169
(1996
).14.
S.
Ishibashi
, K.
Terakura
, and H.
Hosono
, J. Phys. Soc. Jpn.
77
, 053709
(2008
).© 2008 American Institute of Physics.
2008
American Institute of Physics
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