We report on III-nitride photovoltaic cells with external quantum efficiency as high as 63%. double heterojunction solar cells are grown by metal-organic chemical vapor deposition on (0001) sapphire substrates with . A reciprocal space map of the epitaxial structure showed that the InGaN was coherently strained to the GaN buffer. The solar cells have a fill factor of 75%, short circuit current density of , and open circuit voltage of 1.81 V under concentrated AM0 illumination. It was observed that the external quantum efficiency can be improved by optimizing the top contact grid.
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