Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a $SF6$ plasma

Energy exchanges due to chemical reactions between a silicon surface and a $SF6$ plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those obtained when only few reactions occur at the surface to show the part of chemical reactions. At 800 W, the measured energy flux due to chemical reactions is estimated at about $7Wcm−2$ against $0.4Wcm−2$ for ion bombardment and other contributions. Time evolution of the HFM signal is also studied. The molar enthalpy of the reaction giving $SiF4$ molecules was evaluated and is consistent with values given in literature.