The origin and suppression of the subband parasitic peak in AlGaN deep ultraviolet light-emitting diodes have been studied. The parasitic peak is clarified to come from a cladding layer and to be related to Mg dopants. By using as an interlayer between the active region and the cladding layer, this peak is suppressed efficiently. The devices with such an interlayer show improved output power by a factor of 4 at injection current density of , except that the series resistance and turn-on voltage are slightly increased.
Suppression of the subband parasitic peak by interlayer in AlGaN deep ultraviolet light-emitting diodes
J. C. Zhang, Y. H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka; Suppression of the subband parasitic peak by interlayer in AlGaN deep ultraviolet light-emitting diodes. Appl. Phys. Lett. 29 September 2008; 93 (13): 131117. https://doi.org/10.1063/1.2996580
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